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PUBLICATIONS:
  • 1. D. D. Coon, S. D. Gunapala, R. P. G. Karunasiri, and H.-M. Muehlhoff, "Integrating Infrared Detector with Electronically Modulated Response", Electronics Letters 19, 1070 (1983).
  • 2. S. Chaudhuri, D. D. Coon, and R. P. G. Karunasiri, "Impurity-to-band Tunneling in Semiconductors", J. Appl. Phys. 54, 5476 (1983).
  • 3. D. D. Coon and R. P. G. Karunasiri, "Photoionization of Impurity Atoms in Semiconductors in the Presence of an Applied Field", Solid State Electronics 26, 1151 (1983).
  • 4. D. D. Coon and R. P. G. Karunasiri, "Effect of Electric Field on the Long Wavelength Response of Infrared Detectors", Electronics Letters 19, 284 (1983).
  • 5. D. D. Coon and R. P. G. Karunasiri, "New Mode of Infrared Detection Using Quantum Wells", Appl. Phys. Lett. 45, 649 (1984).
  • 6. D. D. Coon, S. D. Gunapala, R. P. G. Karunasiri, and H.-M. Muehlhoff, "IR Detection by Depletion of Trapped Charge", Int. J. of Infrared and Millimeter Waves 5, 197 (1984).
  • 7. D. D. Coon, R. P. G. Karunasiri, and L. Z. Liu, "Narrow Band IR Detection in Multiple Quantum Well Structures", Appl. Phys. Lett. 47, 289 (1985).
  • 8. "Field Ionization Spectroscopy of Shallow Impurity Levels", Solid State Commun. 53, 1144 (1985). (D. D. Coon, S. D. Gunapala, R. P. G. Karunasiri, and H.-M. Muehlhoff)
  • 9. D. D. Coon, S. D. Gunapala, R. P. G. Karunasiri, and H.-M. Muehlhoff, "A High Sensitivity Sampling IR Detector", Infrared Phys. 25, 323 (1985).
  • 10. D. D. Coon, R. P. G. Karunasiri, and H. C. Liu, "Fast Response Quantum Well Photodetector", J. Appl. Phys. 60, 2636 (1986).
  • 11. D. D. Coon and R. P. G. Karunasiri, "Green's Function Quantum-Defect Treatment of Impurity Photoionization in Semiconductors', Phys. Rev. B 33, 8228 (1986).
  • 12. S. V. Bandara, D. D. Coon, and R. P. G. Karunasiri, "Interfacing Multispectral Sensors to Real Time Processors Based on Neural Network Models", Appl. Phys. Lett., 51, 961 (1987).
  • 13. S. D. Gunapala, R. P. G. Karunasiri, and D. D. Coon, "Virtual Level Field Ionization Spectroscopy", Solid State Communications, 63, 1165 (1987).
  • 14. D. D. Coon, R. P. G. Karunasiri, and S. V. Bandara, "Infrared Transient Sensing", Optical Engineering, 27, 471 (1988).
  • 15. Y. J. Mii, R. P. G. Karunasiri and K. L. Wang, "Electrical and Optical Properties of GaAs/AlGaAs Multiple Quantum Wells Grown on Si Substrates", Appl. Phys. Lett., 53, 2050, (1988).
  • 16. T. W. Kang, C. F. Huang, R. P. G. Karunasiri, J. S. Park, and K. L. Wang, "Rheed Observation of MBE-Grown GeSi on Silicon", J. Vac. Sci. Tech. B, 6(2) 721 (1988).
  • 17. S. S. Rhee, J. S. Park, R. P. G. Karunasiri, Q. Ye and K. L. Wang, "Resonant Tunneling through a Si/GeSi/Si Heterostructure on a GeSi Buffer Layer," Appl. Phys. Lett., 53, 204 (1988).
  • 18. R. P. G. Karunasiri and K. L. Wang, "Infrared Absorption in Parabolic Multi-Quantum Well Structures", Superlattice and Microstructures, 4, 661 (1988).
  • 19. K. L. Wang, R. P. G. Karunasiri, J. S. Park, S. S. Rhee, and C. H. Chern, "Resonant Tunneling of Variously Strained Si/GeSi/Si Heterostructure", Superlattices and Microstructures, 5 (2), 201-206, (1989).
  • 20. J. S. Park, R. P. G. Karunasiri, and K. L. Wang, "Study of Hole Transport Through Minibands in Symmetrically Strained GeSi/Si Superlattice", Thin Solid Films, 183, 25 (1989).
  • 21. S. S. Rhee, R. P. G. Karunasiri, C. H. Chern, J. S. Park, and K. L. Wang, "Si/GeSi/Si Resonant Tunneling Diode Doped by Thermal Boron Source", J. Vac. Sci. Technol. B 7 (2), 327-331, (1989).
  • 22. J. S. Park, R. P. G. Karunasiri, K. L. Wang, S. S. Rhee, and C. H. Chern, "Hole Miniband Transport Through a Symmetrically Strained GeSi/Si Superlattice Grown on a Gex/2Si1-x/2", Appl. Phys. Lett., 54, 1564, (1989).
  • 23. Y. J. Mii, R. P. G. Karunasiri and K. L. Wang, "Growth and Characterization of Doped GaAs/AlGaAs Multiple Quantum Well Structures on Si Substrates for Infrared Detection", J. Vac. Sci. Technol. B 7 (2), 341-344, (1989).
  • 24. Y. J. Mii, K. L. Wang, R. P. G. Karunasiri, and P. F. Yuh, "Observation of Large Oscillator Strengths for Both 1-2 and 1-3 Intersubband Transitions of Step Quantum Well", Appl. Phys. Lett., 56, 1046 (1990).
  • 25. R. P. G. Karunasiri, J. S. Park, K. L. Wang, and L-J. Cheng, "Intersubband Infrared Absorption GeSi/Si Superlattice by Photocurrent Measurement", Appl. Phys. Lett., 56, 1342 (1990).
  • 26. Y. J. Mii, R. P. G. Karunasiri, K. L. Wang, M. Chen, and P. F. Yuh, "Large Stark Shifts of the Local to Global State Intersubband Transitions in Step Quantum Wells", Appl. Phys. Lett., 56, 1986 (1990).
  • 27. R. P. G. Karunasiri, Y. J. Mii, and K. L. Wang, "Tunable Infrared Modulator and Switch Using Stark Shift in Step Quantum Wells", Electron Device Letters, 11, 227 (1990).
  • 28. R. P. G. Karunasiri, J. S. Park, Y. J. Mii, and K. L. Wang, "Intersubband Absorption in GeSi/Si Multiple Quantum Well Structures", Appl. Phys. Lett., 57, 1342 (1990).
  • 29. J. S. Park, R. P. G. Karunasiri, and K. L. Wang, "Observation of Large Stark Shift in GeSi/Si Multiple Quantum Wells", J. Vac. Sci. Tech., B8, 214 (1990).
  • 30. M. A. Kallel, V. Arbet, R. P. G. Karunasiri, and K. L. Wang, "Photoluminescence Characterization of SimGen Superlattices", J. Vac. Sci. Tech., B8, 217 (1990).
  • 31. R. P. G. Karunasiri, J. S. Park and K. L. Wang, "SiGe/Si Multiple Quantum Well Infrared Detector", Appl. Phys. Lett., 59, 2588 (1991).
  • 32. V. Arbet-Engles, K. L. Wang, R. P. G. Karunasiri, and J. S. Park, "Effect of Hydrogenation on Hole Intersubband Absorption in ƒÔ-doped Si Layers", Appl. Phys. Lett., 59, 2248 (1991).
  • 33. J. S. Park, R. P. Karunasiri, Y. J. Mii, and K. L. Wang, "Hole Intersubband Absorption in ƒÔ-doped Multiple Si Layers", Appl. Phys. Lett., 58, 1083 (1991).
  • 34. R. P. G. Karunasiri and K. L. Wang, "Quantum Devices Using SiGe/Si Heterostructures", J. Vac. Sci. Technol. B, 9, 2064 (1991).
  • 35. R. Arghavani, R. P. G. Karunasiri, T. C. Kuo, Y. K. Kim, and K. L. Wang, "Internal Photoemission in CoGa/GaAs Schottky Barriers, Possible Injection of Electrons into X an L Valleys", J. Vac. Sci. Technol. A, 9, 987 (1991).
  • 36. R. P. G. Karunasiri, J. S. Park, and K. L. Wang, "Normal Incidence Infrared Detector Using Inter-Valence-Subband Transition in SiGe/Si Multiple Quantum Wells", Appl. Phys. Lett., 61, 2434 (1992).
  • 37. K. L. Wang, R. P. G. Karunasiri, and J. S. Park, "Hole Intersubband Absorption of GeSi/Si and ƒÔ-doped Quantum Wells", Surf. Sci., 267, 74 (1992).
  • 38. J. S. Park, R. P. G. Karunasiri, and K. L. Wang, "Inter-valence-subband Transition in SiGe/Si Multiple Quantum Wells-Normal Incident Detection", Appl. Phys. Lett., 61, 681 (1992).
  • 39. J. S. Park, R. P. G. Karunasiri, and K. L. Wang, "Normal Incident Infrared Detector Using SiGe/Si Multiple Quantum Wells", Appl. Phys. Lett., 60, 103 (1992).
  • 40. K. L. Wang and R. P. G. Karunasiri, "SiGe/Si Electronics and Optoelectronics", J. Vac. Sci. Technol., 11, 1159 (1993).
  • 41. H. S. Li, R. P. G. Karunasiri, Y. W. Chen, and K. L. Wang, "Electron Intersubband Normal Incidence Absorption in InGaAs/GaAs Quantum Wells", J. Vac. Sci. Technol., 11, 922 (1993).
  • 42. G. Karunasiri, "Intersubband Transitions in Si-based Quantum Wells and Application for Infrared Photodetectors", Jap. J. Appl. Phys., 33, 2401 (1994).
  • 43. R. P. G. Karunasiri, J. S. Park, K. L. Wang and S. K. Chung, "Infrared Photodetectors using SiGe/Si Multiple Quantum Wells", Optical Engineering, 33, 1468 (1994).
  • 44. G. Karunasiri, J. S. Park, J. Chen, R. Shih, J. F. Scheihing, and M. A. Dodd, "Normal Incident InGaAs/GaAs Multiple Quantum Well Infrared Detector Using Electron Intersubband Transitions", Appl. Phys. Lett., 67, 2600 (1995).
  • 45. A. Raman, S. J. Chua, G. Karunasiri and P. R. Vaya, "Heavily Silicon Doped InGaAlAs/InP Epilayers Grown by Molecular Beam Epitaxy", Journal of Crystal Growth, 156, 186 (1995).
  • 46. G. Karunasiri, S. J. Chua, J. S. Park, and K. L. Wang, "Doping Dependence of Intersubband Transitions in SiGe/Si Multiple Quantum Wells", Materials Science & Engineering B (1995).
  • 47. M. Gupta, G. Karunasiri and M. O. Lai, "Effect of Presence and Type of Particulate Reinforcement on the Electrical Conductivity of non-heat Treatable Aluminum", Materials Science & Engineering A, 219, 133-141 (1996).
  • 48. G. Karunasiri, "Thermionic Emission and Tunneling in InGaAs/GaAs Quantum Well Infrared Detectors", J. Appl. Phys., 79, 1-3(1996).
  • 49. T. Mei, G. Karunasiri, and S. J. Chua, "Two-color Infrared Detection Using Intersubband Transitions in Multiple Step Quantum Wells with Superlattice Barriers", Appl. Phys. Lett., 71, 14-16 (1997).
  • 50. E. H. Lim, G. Karunasiri, S. J. Chua, H. Wong, K. L. Pey, and K. H. Lee "Monitoring of TiSi2 Formation on Narrow Polycrystalline Silicon Lines Using Raman Spectroscopy", IEEE Electron Device Letters, 19, 171-173 (1998).
  • 51. X. Gu. G. Karunasiri, G. Chen, U. Sridhar and B. Xu, "Determination of Thermal Parameters of Microbolometers using a Single Electrical Measurement", Appl. Phys. Lett, 72, 1881-1883 (1998).
  • 52. Y. F. Lu, Z. M. Ren, W. D. Song, D. S. H. Chan, T. S. Low, G. Karunasiri, G. Chen, K. Li ¡§Studies of Carbon Nitride Thin Films Synthesized by KrF Excimer Laser Ablation of Graphite in a Nitrogen Atmosphere¡¨, J. Appl. Phys., 84, 2909-2912 (1998).
  • 53. X. Gu. G. Karunasiri, J. Yu, G. Chen, W. J. Zeng, and U. Sridhar, "A New On-chip Compensation of Self-heating Effects in Microbolometer Infrared Detector Arrays", Sensors & Actuators, 69, 92-96 (1998).
  • 54. C. S. Ho, K. L. Pey, H. Wong, G. Karunasiri, S. J. Chua, K. H. Lee and L. Chan, "Integration of SALICIDE Process for Deep-submicron CMOS Technology: Effect of Nitrogen/Argon-amorphized Implant on SALICIDE Formation", Materials Science & Engineering B, 51, 274-279 (1998).
  • 55. E. H. Lim, G. Karunasiri, S. J. Chua, Z. X. Shen, H. Wong, K. L. Pey, K. H. Lee and L. Chan, "Characterization of Titanium Silicide by Raman Spectroscopy for Sub-Micron IC Processing", Microelectronic Engineering (1998).
  • 56. S. J. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang , S. Wang, X. G. Xie, ¡§Characteristics of InGaAs quantum dot infrared photodetectors¡¨, Appl. Phys. Lett., 73, 3153-3155, (1998).
  • 57. A.S.W. Lee, E.H. Li, and G. Karunasiri, "Vacancy-enhanced Intermixing in Highly Strained InGaAs/GaAs Multiple Quantum Well Photodetector", Journal of Appl. Phys., 86, 3402-3407 (1999).
  • 58. Y. F. Lu, Z. M. Ren, H. Q. Ni, Z. F. He, D. S. H. Chan, T. S. Low, S. Y. Chen, G. Karunasiri, G. Chen, and K. Li, "Carbon Nitride Thin Films Deposited by Nitrogen-ion-assisted KRF Excimer Ablation of Graphite", Appl. Surf. Sci., 138-139, 494-498 (1999).
  • 59. S. Ravi Kiran and G. Karunasiri, "Electro-thermal Modeling of Infrared Microemitters Using PSPICE", Sensors & Actuators, A72, 110-114 (1999).
  • 60. A. S. W. Lee, E.H. Li, and G. Karunasiri "Intermixing in Strained InGaAs/GaAs Quantum Well Infrared Photodetectors", Appl. Phys. Lett, 74, 1102-1104 (1999).
  • 61. X. He, G. Karunasiri, T. Mei, W. J. Zeng, P. Neuzil, and U. Sridhar ¡§Performance of Microbolometer Focal Plane Arrays under Varying Pressure¡¨, IEEE EDL, 21, 233-235 (2000).
  • 62. M. V. S. Ramakrishna, G. Karunasiri, N. Pavel, U. Sridhar, and W. J. Zeng "A Microbolometer Temperature Sensor with Novel Self-heating Compensation Scheme", Sensors & Actuators, 79, 122-127 (2000).
  • 63. Y. H. Chee and G. Karunasiri, ¡§Circuit Model for Quantum Well Infrared Photodetectors and its Comparison with Experiments", Physica E, 7, 135-138 (2000).
  • 64. Y. P. Xu, X. B. Qian, and G. Karunasiri, ¡§Circuit for Microbolometer Bias-heating Cancellation¡¨, Electron. Lett 36, 1993-1994 (2000).
  • 65. L. Zhou, G. Karunasiri and Y. H. Chee, "Measurement of Excited State Position of Bound-to-Bound Quantum Well Infrared Detectors", J. Appl. Phys., 90, 2045-2047 (2001).
  • 66. K. L. Teo, L. Qin, I. M. Noordin, G. Karunasiri, Z. X. Shen, O. G. Schmidt, K. Eberl, H. J. Queisser, ¡§Effects of Hydrostatic Pressure on Raman Scattering in Ge Quantum Dots¡¨, Phys. Rev. B, 63, 1-4 (2001).
  • 67. C. W. Cheah, L. S. Tan, and G. Karunasiri, "Application of Analytical k.p Model with Envelope Function Approximation to Intersubband Transitions in n-type III-V Semiconductor ƒ· Quantum Wells", J. Appl. Phys., 91, 5105-5115 (2002).
  • 68. T. Mei, P. Neuzil, G. Karunasiri, and W. J. Zeng, ¡§Approach to Measure Thermal Efficiency of Bolometer Sensors¡¨, Appl. Phys. Lett., 80, 2183-2185 (2002).
  • 69. C. W. Cheah, G. Karunasiri, L. S. Tan, and L. F. Zhou, "Responsivities of n-type GaAs/InGaAs/AlGaAs Step Multiple-quantum-well Infrared Detectors", Appl. Phys. Lett, 80, 145-147 (2002).
  • 70. C. W. Cheah, G. Karunasiri, and L. S. Tan, ¡§Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption¡¨, Semicond. Sci. & Tech. 17, 1028-1037 (2002).
  • 71. G. Karunasiri, M. V. S. Ramakrishna, and P. Neuzil, "Effect of Operating Temperature on Electrical and Thermal Properties of Microbolometer Infrared Sensors", Sensors & Materials, 15, 147-154 (2003).
  • 72. X. Qian, Y. P. Xu and G. Karunasiri, ¡§Self-Heating Cancellation Circuits for Microbolometer¡¨, Sensors & Actuators, A111, 196-202 (2004).
  • 73. R. Arghavani, Z. Yuan, N. Ingle, K-B Jung, M. Seamons, S. Venkataraman V. Banthia, K. Lilja, P. Leon, G. Karunasiri, S. Yoon, and A. Mascarenhas ¡§Stress Management in Sub 90nm Transistor Architecture¡¨ IEEE Trans, on Electron Devices, 51, 1740-1743 (2004).
  • 74. H. Li, T. Mei, K. R. Lantz and G. Karunasiri, ¡§Growth of InGaAsP based Asymmetric Quantum Well Infrared Photodetector using Metalorganic Vapor Phase Epitaxy¡¨, J. Appl. Phys., 96 6799-6802 (2004).
  • 75. C. S. Ho, K. L. Pey, C. H. Tung, B. C. Zhang, K. C. Tee, G. Karunasiri and S. J. Chua, ¡§Uniform Void-free CoSi2 Formation on Shallow-trench-isolation Bounded Narrow Si (100) Lines by Template Layer Stress Reduction¡¨, Electrochemical and Solid State Letters 7, 49-51 (2004).
  • 76. M. P. Touse, G. Karunasiri, L. R. Kevin, H. Li, and T. Mei, ¡§Near and mid infrared detection using GaAs/InxGa1-xAs/InyGa1-yAs multiple step quantum wells¡¨, Appl. Phys. Lett., 86, 093501 (2005).
  • 77. H. Li, T. Mei, G. Karunasiri, W. J. Fan, D. H. Zhang, S. F. Yoon, and K. H. Yuan ¡§Growth of p-type GaAs/AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy¡¨, J. Appl. Phys., 98 6799-6802 (2005).
  • 78. R. Arghavani, L. Xia, H. M¡¦Saad, G. Karunasiri, A. Mascarenhas, and S. E. Thompson, ¡§A Reliable and Manufacturable Method to Induce a Stress of > 1 GPa on a P-Channel MOSFET in High Volume Manufacturing¡¨ IEEE EDL, 27, 114-116 (2006).
  • 79. D. C. Peraria, M. P. Fargues, G. Karunasiri, ¡§Investigation of uncooled infrared imagery for face recognition¡¨, Optical Engineering 45, Art. No. 016401 (2006).
  • 80. Z. C. Feng, J. W. Yu, J. Zhao, T. R. Yang, G. Karunasiri, W. Lu, W. E. Collins, ¡§Optical and material properties of sandwiched Si/SiGe/Si heterostructures¡¨, Surface & Coatings Technol. 200, 3265-3269 (2006).
  • 81. G. Karunasiri, ¡§Spontaneous pulse generation using silicon controlled rectifier¡¨, Appl. Phys. Lett., 89, 023501 (2006).



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