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PUBLICATIONS:
    1. D. D. Coon, S. D. Gunapala, R. P. G. Karunasiri, and H.-M. Muehlhoff, "Integrating Infrared Detector with Electronically Modulated Response", Electronics Letters 19, 1070 (1983).
    2. S. Chaudhuri, D. D. Coon, and R. P. G. Karunasiri, "Impurity-to-band Tunneling in Semiconductors", J. Appl. Phys. 54, 5476 (1983).
    3. D. D. Coon and R. P. G. Karunasiri, "Photoionization of Impurity Atoms in Semiconductors in the Presence of an Applied Field", Solid State Electronics 26, 1151 (1983).
    4. D. D. Coon and R. P. G. Karunasiri, "Effect of Electric Field on the Long Wavelength Response of Infrared Detectors", Electronics Letters 19, 284 (1983).
    5. D. D. Coon and R. P. G. Karunasiri, "New Mode of Infrared Detection Using Quantum Wells", Appl. Phys. Lett. 45, 649 (1984).
    6. D. D. Coon, S. D. Gunapala, R. P. G. Karunasiri, and H.-M. Muehlhoff, "IR Detection by Depletion of Trapped Charge", Int. J. of Infrared and Millimeter Waves 5, 197 (1984).
    7. D. D. Coon, R. P. G. Karunasiri, and L. Z. Liu, "Narrow Band IR Detection in Multiple Quantum Well Structures", Appl. Phys. Lett. 47, 289 (1985).
    8. D. D. Coon, S. D. Gunapala, R. P. G. Karunasiri, and H.-M. Muehlhoff, "A High Sensitivity Sampling IR Detector", Infrared Phys. 25, 323 (1985).
    9. D. D. Coon, R. P. G. Karunasiri, and H. C. Liu, "Fast Response Quantum Well Photodetector", J. Appl. Phys. 60, 2636 (1986).
    10. D. D. Coon and R. P. G. Karunasiri, "Green's Function Quantum-Defect Treatment of Impurity Photoionization in Semiconductors', Phys. Rev. B 33, 8228 (1986).
    11. S. V. Bandara, D. D. Coon, and R. P. G. Karunasiri, "Interfacing Multispectral Sensors to Real Time Processors Based on Neural Network Models", Appl. Phys. Lett., 51, 961 (1987).
    12. S. D. Gunapala, R. P. G. Karunasiri, and D. D. Coon, "Virtual Level Field Ionization Spectroscopy", Solid State Communications, 63, 1165 (1987).
    13. D. D. Coon, R. P. G. Karunasiri, and S. V. Bandara, "Infrared Transient Sensing", Optical Engineering, 27, 471 (1988).
    14. Y. J. Mii, R. P. G. Karunasiri and K. L. Wang, "Electrical and Optical Properties of GaAs/AlGaAs Multiple Quantum Wells Grown on Si Substrates", Appl. Phys. Lett., 53, 2050, (1988).
    15. T. W. Kang, C. F. Huang, R. P. G. Karunasiri, J. S. Park, and K. L. Wang, "Rheed Observation of MBE-Grown GeSi on Silicon", J. Vac. Sci. Tech. B, 6(2) 721 (1988).
    16. S. S. Rhee, J. S. Park, R. P. G. Karunasiri, Q. Ye and K. L. Wang, "Resonant Tunneling through a Si/GeSi/Si Heterostructure on a GeSi Buffer Layer," Appl. Phys. Lett., 53, 204 (1988).
    17. R. P. G. Karunasiri and K. L. Wang, "Infrared Absorption in Parabolic Multi-Quantum Well Structures", Superlattice and Microstructures, 4, 661 (1988).
    18. K. L. Wang, R. P. G. Karunasiri, J. S. Park, S. S. Rhee, and C. H. Chern, "Resonant Tunneling of Variously Strained Si/GeSi/Si Heterostructure", Superlattices and Microstructures, 5 (2), 201-206, (1989).
    19. J. S. Park, R. P. G. Karunasiri, and K. L. Wang, "Study of Hole Transport Through Minibands in Symmetrically Strained GeSi/Si Superlattice", Thin Solid Films, 183, 25 (1989).
    20. S. S. Rhee, R. P. G. Karunasiri, C. H. Chern, J. S. Park, and K. L. Wang, "Si/GeSi/Si Resonant Tunneling Diode Doped by Thermal Boron Source", J. Vac. Sci. Technol. B 7 (2), 327-331, (1989).
    21. J. S. Park, R. P. G. Karunasiri, K. L. Wang, S. S. Rhee, and C. H. Chern, "Hole Miniband Transport Through a Symmetrically Strained GeSi/Si Superlattice Grown on a Gex/2Si1-x/2", Appl. Phys. Lett., 54, 1564, (1989).
    22. Y. J. Mii, R. P. G. Karunasiri and K. L. Wang, "Growth and Characterization of Doped GaAs/AlGaAs Multiple Quantum Well Structures on Si Substrates for Infrared Detection", J. Vac. Sci. Technol. B 7 (2), 341-344, (1989).
    23. Y. J. Mii, K. L. Wang, R. P. G. Karunasiri, and P. F. Yuh, "Observation of Large Oscillator Strengths for Both 1-2 and 1-3 Intersubband Transitions of Step Quantum Well", Appl. Phys. Lett., 56, 1046 (1990).
    24. R. P. G. Karunasiri, J. S. Park, K. L. Wang, and L-J. Cheng, "Intersubband Infrared Absorption GeSi/Si Superlattice by Photocurrent Measurement", Appl. Phys. Lett., 56, 1342 (1990).
    25. Y. J. Mii, R. P. G. Karunasiri, K. L. Wang, M. Chen, and P. F. Yuh, "Large Stark Shifts of the Local to Global State Intersubband Transitions in Step Quantum Wells", Appl. Phys. Lett., 56, 1986 (1990).
    26. R. P. G. Karunasiri, Y. J. Mii, and K. L. Wang, "Tunable Infrared Modulator and Switch Using Stark Shift in Step Quantum Wells", Electron Device Letters, 11, 227 (1990).
    27. R. P. G. Karunasiri, J. S. Park, Y. J. Mii, and K. L. Wang, "Intersubband Absorption in GeSi/Si Multiple Quantum Well Structures", Appl. Phys. Lett., 57, 1342 (1990).
    28. J. S. Park, R. P. G. Karunasiri, and K. L. Wang, "Observation of Large Stark Shift in GeSi/Si Multiple Quantum Wells", J. Vac. Sci. Tech., B8, 214 (1990).
    29. M. A. Kallel, V. Arbet, R. P. G. Karunasiri, and K. L. Wang, "Photoluminescence Characterization of SimGen Superlattices", J. Vac. Sci. Tech., B8, 217 (1990).
    30. R. P. G. Karunasiri, J. S. Park and K. L. Wang, "SiGe/Si Multiple Quantum Well Infrared Detector", Appl. Phys. Lett., 59, 2588 (1991).
    31. V. Arbet-Engles, K. L. Wang, R. P. G. Karunasiri, and J. S. Park, "Effect of Hydrogenation on Hole Intersubband Absorption in d-doped Si Layers", Appl. Phys. Lett., 59, 2248 (1991).
    32. J. S. Park, R. P. Karunasiri, Y. J. Mii, and K. L. Wang, "Hole Intersubband Absorption in d-doped Multiple Si Layers", Appl. Phys. Lett., 58, 1083 (1991).
    33. R. P. G. Karunasiri and K. L. Wang, "Quantum Devices Using SiGe/Si Heterostructures", J. Vac. Sci. Technol. B, 9, 2064 (1991).
    34. R. Arghavani, R. P. G. Karunasiri, T. C. Kuo, Y. K. Kim, and K. L. Wang, "Internal Photoemission in CoGa/GaAs Schottky Barriers, Possible Injection of Electrons into X an L Valleys", J. Vac. Sci. Technol. A, 9, 987 (1991).
    35. R. P. G. Karunasiri, J. S. Park, and K. L. Wang, "Normal Incidence Infrared Detector Using Inter-Valence-Subband Transition in SiGe/Si Multiple Quantum Wells", Appl. Phys. Lett., 61, 2434 (1992).
    36. K. L. Wang, R. P. G. Karunasiri, and J. S. Park, "Hole Intersubband Absorption of GeSi/Si and d-doped Quantum Wells", Surf. Sci., 267, 74 (1992).
    37. J. S. Park, R. P. G. Karunasiri, and K. L. Wang, "Inter-valence-subband Transition in SiGe/Si Multiple Quantum Wells-Normal Incident Detection", Appl. Phys. Lett., 61, 681 (1992).
    38. J. S. Park, R. P. G. Karunasiri, and K. L. Wang, "Normal Incident Infrared Detector Using SiGe/Si Multiple Quantum Wells", Appl. Phys. Lett., 60, 103 (1992).
    39. K. L. Wang and R. P. G. Karunasiri, "SiGe/Si Electronics and Optoelectronics", J. Vac. Sci. Technol., 11, 1159 (1993).
    40. H. S. Li, R. P. G. Karunasiri, Y. W. Chen, and K. L. Wang, "Electron Intersubband Normal Incidence Absorption in InGaAs/GaAs Quantum Wells", J. Vac. Sci. Technol., 11, 922 (1993).
    41. G. Karunasiri, "Intersubband Transitions in Si-based Quantum Wells and Application for Infrared Photodetectors", Jap. J. Appl. Phys., 33, 2401 (1994).
    42. R. P. G. Karunasiri, J. S. Park, K. L. Wang and S. K. Chung, "Infrared Photodetectors using SiGe/Si Multiple Quantum Wells", Optical Engineering, 33, 1468 (1994).
    43. G. Karunasiri, J. S. Park, J. Chen, R. Shih, J. F. Scheihing, and M. A. Dodd, "Normal Incident InGaAs/GaAs Multiple Quantum Well Infrared Detector Using Electron Intersubband Transitions", Appl. Phys. Lett., 67, 2600 (1995).
    44. A. Raman, S. J. Chua, G. Karunasiri and P. R. Vaya, "Heavily Silicon Doped InGaAlAs/InP Epilayers Grown by Molecular Beam Epitaxy", Journal of Crystal Growth, 156, 186 (1995).
    45. G. Karunasiri, S. J. Chua, J. S. Park, and K. L. Wang, "Doping Dependence of Intersubband Transitions in SiGe/Si Multiple Quantum Wells", Materials Science & Engineering B (1995).
    46. M. Gupta, G. Karunasiri and M. O. Lai, "Effect of Presence and Type of Particulate Reinforcement on the Electrical Conductivity of non-heat Treatable Aluminum", Materials Science & Engineering A, 219, 133-141 (1996).
    47. G. Karunasiri, "Thermionic Emission and Tunneling in InGaAs/GaAs Quantum Well Infrared Detectors", J. Appl. Phys., 79, 1-3(1996).
    48. T. Mei, G. Karunasiri, and S. J. Chua, "Two-color Infrared Detection Using Intersubband Transitions in Multiple Step Quantum Wells with Superlattice Barriers", Appl. Phys. Lett., 71, 14-16 (1997).
    49. E. H. Lim, G. Karunasiri, S. J. Chua, H. Wong, K. L. Pey, and K. H. Lee "Monitoring of TiSi2 Formation on Narrow Polycrystalline Silicon Lines Using Raman Spectroscopy", IEEE Electron Device Letters, 19, 171-173 (1998).
    50. X. Gu. G. Karunasiri, G. Chen, U. Sridhar and B. Xu, "Determination of Thermal Parameters of Microbolometers using a Single Electrical Measurement", Appl. Phys. Lett, 72, 1881-1883 (1998).
    51. Y. F. Lu, Z. M. Ren, W. D. Song, D. S. H. Chan, T. S. Low, G. Karunasiri, G. Chen, K. Li “Studies of Carbon Nitride Thin Films Synthesized by KrF Excimer Laser Ablation of Graphite in a Nitrogen Atmosphere”, J. Appl. Phys., 84, 2909-2912 (1998).
    52. X. Gu. G. Karunasiri, J. Yu, G. Chen, W. J. Zeng, and U. Sridhar, "A New On-chip Compensation of Self-heating Effects in Microbolometer Infrared Detector Arrays", Sensors & Actuators, 69, 92-96 (1998).
    53. C. S. Ho, K. L. Pey, H. Wong, G. Karunasiri, S. J. Chua, K. H. Lee and L. Chan, "Integration of SALICIDE Process for Deep-submicron CMOS Technology: Effect of Nitrogen/Argon-amorphized Implant on SALICIDE Formation", Materials Science & Engineering B, 51, 274-279 (1998).
    54. E. H. Lim, G. Karunasiri, S. J. Chua, Z. X. Shen, H. Wong, K. L. Pey, K. H. Lee and L. Chan, "Characterization of Titanium Silicide by Raman Spectroscopy for Sub-Micron IC Processing", Microelectronic Engineering (1998).
    55. S. J. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang , S. Wang, X. G. Xie, “Characteristics of InGaAs quantum dot infrared photodetectors”, Appl. Phys. Lett., 73, 3153-3155, (1998).
    56. A.S.W. Lee, E.H. Li, and G. Karunasiri, "Vacancy-enhanced Intermixing in Highly Strained InGaAs/GaAs Multiple Quantum Well Photodetector", Journal of Appl. Phys., 86, 3402-3407 (1999).
    57. Y. F. Lu, Z. M. Ren, H. Q. Ni, Z. F. He, D. S. H. Chan, T. S. Low, S. Y. Chen, G. Karunasiri, G. Chen, and K. Li, "Carbon Nitride Thin Films Deposited by Nitrogen-ion-assisted KRF Excimer Ablation of Graphite", Appl. Surf. Sci., 138-139, 494-498 (1999).
    58. S. Ravi Kiran and G. Karunasiri, "Electro-thermal Modeling of Infrared Microemitters Using PSPICE", Sensors & Actuators, A72, 110-114 (1999).
    59. A. S. W. Lee, E.H. Li, and G. Karunasiri "Intermixing in Strained InGaAs/GaAs Quantum Well Infrared Photodetectors", Appl. Phys. Lett, 74, 1102-1104 (1999).
    60. X. He, G. Karunasiri, T. Mei, W. J. Zeng, P. Neuzil, and U. SridharPerformance of Microbolometer Focal Plane Arrays under Varying Pressure”, IEEE EDL, 21, 233-235 (2000).
    61. M. V. S. Ramakrishna, G. Karunasiri, N. Pavel, U. Sridhar, and W. J. Zeng "A Microbolometer Temperature Sensor with Novel Self-heating Compensation Scheme", Sensors & Actuators, 79, 122-127 (2000).
    62. Y. H. Chee and G. Karunasiri, “Circuit Model for Quantum Well Infrared Photodetectors and its Comparison with Experiments", Physica E, 7, 135-138 (2000).
    63. Y. P. Xu, X. B. Qian, and G. Karunasiri, “Circuit for Microbolometer Bias-heating Cancellation”, Electron. Lett 36, 1993-1994 (2000).
    64. L. Zhou, G. Karunasiri and Y. H. Chee, "Measurement of Excited State Position of Bound-to-Bound Quantum Well Infrared Detectors", J. Appl. Phys., 90, 2045-2047 (2001).
    65. K. L. Teo, L. Qin, I. M. Noordin, G. Karunasiri, Z. X. Shen, O. G. Schmidt, K. Eberl, H. J. Queisser, “Effects of Hydrostatic Pressure on Raman Scattering in Ge Quantum Dots”, Phys. Rev. B, 63, 1-4 (2001).
    66. C. W. Cheah, L. S. Tan, and G. Karunasiri, "Application of Analytical k.p Model with Envelope Function Approximation to Intersubband Transitions in n-type III-V Semiconductor G Quantum Wells", J. Appl. Phys., 91, 5105-5115 (2002).
    67. T. Mei, P. Neuzil, G. Karunasiri, and W. J. Zeng, “Approach to Measure Thermal Efficiency of Bolometer Sensors”, Appl. Phys. Lett., 80, 2183-2185 (2002).
    68. C. W. Cheah, G. Karunasiri, L. S. Tan, and L. F. Zhou, "Responsivities of n-type GaAs/InGaAs/AlGaAs Step Multiple-quantum-well Infrared Detectors", Appl. Phys. Lett, 80, 145-147 (2002).
    69. C. W. Cheah, G. Karunasiri, and L. S. Tan, “Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption”, Semicond. Sci. & Tech. 17, 1028-1037 (2002).
    70. G. Karunasiri, M. V. S. Ramakrishna, and P. Neuzil, "Effect of Operating Temperature on Electrical and Thermal Properties of Microbolometer Infrared Sensors", Sensors & Materials, 15, 147-154 (2003).
    71. X. Qian, Y. P. Xu and G. Karunasiri, “Self-Heating Cancellation Circuits for Microbolometer”, Sensors & Actuators, A111, 196-202 (2004).
    72. R. Arghavani, Z. Yuan, N. Ingle, K-B Jung, M. Seamons, S. Venkataraman V. Banthia, K. Lilja, P. Leon, G. Karunasiri, S. Yoon, and A. Mascarenhas “Stress Management in Sub 90nm Transistor Architecture” IEEE Trans, on Electron Devices, 51, 1740-1743 (2004).
    73. H. Li, T. Mei, K. R. Lantz and G. Karunasiri, “Growth of InGaAsP based Asymmetric Quantum Well Infrared Photodetector using Metalorganic Vapor Phase Epitaxy”, J. Appl. Phys., 96 6799-6802 (2004).
    74. C. S. Ho, K. L. Pey, C. H. Tung, B. C. Zhang, K. C. Tee, G. Karunasiri and S. J. Chua, “Uniform Void-free CoSi2 Formation on Shallow-trench-isolation Bounded Narrow Si (100) Lines by Template Layer Stress Reduction”, Electrochemical and Solid State Letters 7, 49-51 (2004).
    75. M. P. Touse, G. Karunasiri, L. R. Kevin, H. Li, and T. Mei, “Near and mid infrared detection using GaAs/InxGa1-xAs/InyGa1-yAs multiple step quantum wells”, Appl. Phys. Lett., 86, 093501 (2005)
    76. H. Li, T. Mei, G. Karunasiri, W. J. Fan, D. H. Zhang, S. F. Yoon, and K. H. Yuan “Growth of p-type GaAs/AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy”, J. Appl. Phys., 98 6799-6802 (2005).
    77. R. Arghavani, L. Xia, H. M’Saad, G. Karunasiri, A. Mascarenhas, and S. E. Thompson, “A Reliable and Manufacturable Method to Induce a Stress of > 1 GPa on a P-Channel MOSFET in High Volume Manufacturing” IEEE EDL, 27, 114-116 (2006).
    78. D. C. Peraria, M. P. Fargues, G. Karunasiri, “Investigation of uncooled infrared imagery for face recognition”, Optical Engineering 45, Art. No. 016401 (2006).
    79. Z. C. Feng, J. W. Yu, J. Zhao, T. R. Yang, G. Karunasiri, W. Lu, W. E. Collins, “Optical and material properties of sandwiched Si/SiGe/Si heterostructures”, Surface & Coatings Technol. 200, 3265-3269 (2006).
    80. G. Karunasiri, “Spontaneous pulse generation using silicon controlled rectifier”, Appl. Phys. Lett., 89, 023501 (2006).
    81. D. I. Domboulas, M. P. Fargues, G. Karunasiri, “Uncooled infrared-imaging face recognition using kernel-based generalized discriminant analysis”, Optical Engineering, 46, 087201 (2007).
    82. T. Mei, H. Li, G. Karunasiri, W. J. Fan, D. H. Zhang, S. F. Yoon, and K. H. Yuan, “Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate”, Infrared Phys. & Technol., 50, 119-123 (2007).
    83. F. D. P. Alves, G. Karunasiri, N. Hanson, M. Byloos, H. C. Liu, A. Bezinger, M. Buchanan, “NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions”, Infrared Phys. & Technol., 50, 182-186 (2007).
    84. B. N. Behnken, G. Karunasiri, D. Chamberlin, P. R. Robrish, and J. Faist, "Real-time imaging using a 2.8THz quantum cascade laser and uncooled infrared microbolometer camera," Optics Lett., 33, 440-442 (2008).
    85. F. D. P. Alves, J. Amorim, M. Byloos, H. C. Liu, A. Bezinger, M. Buchanan, N. Hanson, G. Karunasiri, "Three-band quantum well infrared photodetector using interband and intersubband transitions", J Appl. Phys., 103, 114515 (2008).
    86. V. Saxena, L. Marcu, and G. Karunasiri, "A novel noninvasive all optical technique to monitor physiology of an exercising muscle", Phys. Med. & Bio., 53, 6211-6225 (2008).
    87. F. D. P. Alves, R. A. Santos, J. Amorim, A. K. Issmael, and G. Karunasiri, "Widely separate spectral sensitivity quantum well infrared photodetector using interband and intersubband transitions", IEEE Sensors Journal, 8, 842-848 (2008).
    88. C. Bolakis, D. Grbovic, N. V. Lavric, and G. Karunasiri, “Design and characterization of terahertz-absorbing nano-laminates of dielectric and metal thin films”, Optics Express, 18, 14488 (2010).
    89. M. P. Touse, K. Simsek, J. O. Sinibaldi, J. Catterlin and G. Karunasiri, "Fabrication of a microelectromechanical directional sound sensor with electronic readout using comb fingers", Appl. Phys. Lett., 96, 173701 (2010).
    90. V. Naval, C. Smith, V. Ryzhikov, S. Naydenov, F. Alves, and G. Karunasiri, " Zinc selenide-based Schottky barrier detectors for ultraviolet-A and ultraviolet-B detection, Advances in Optoelectronics, 2010, 619571 (2010).
    91. B. Fluegel, K. Alberi, L. Bhusal, A. Mascarenhas, D. W. Snoke, G. Karunasiri, L. N. Pfeiffer and K. West, "Exciton pattern generation in GaAs/AlGaAs multiple quantum wells", Phys. Rev. B, 83, 195320 (2011).
    92. B Kim, P Phamduy, J Sinibaldi and G Karunasiri, "Characterization of a micromachined vertically deformable varying-pitch grating for a spectrometer ", J. Micromech. Microeng. 22 015001 (2012).
    93. F. Alves, B. Kearney, D. Grbovic, N. V. Lavrik, and G. Karunasiri, "Strong terahertz absorption using thin metamaterial structures", Appl. Phys. Lett., 100, 111104 (2012).
    94. F. Alves, D. Grbovic, B. Kearney, and G. Karunasiri, "MEMS Bi-material terahertz sensor with integrated metamaterial absorber ", Opt. Lett., 37, 1886 (2012).
    95. F. Alves, A. Karamitros, D. Grbovic, B. Kearney, and G. Karunasiri, "Highly absorbing nano-scale metal films for terahertz applications", Opt. Eng. 51, 063801 (2012).
    96. W. Freeman and G. Karunasiri, "Nonequilibrium electron leakage in terahertz quantum cascade structures", Phys. Rev. B, 65, 195326-1-6 (2012).
    97. F. Alves, B. Kearney, D. Grbovic, and G. Karunasiri, "Narrowband terahertz emitters using metamaterial structures," Optics Express., 20, 21025-21032 (2012).
    98. R. Downey, L. Brewer, and G. Karunasiri, "Using a nanoindenter to characterize a MEMS directional sound sensor", Sensors & Actuators, A191, 27-33 (2013).
    99. W. Freeman and G. Karunasiri, “Nonresonant tunneling phonon depopulated GaN based terahertz quantum cascade structures”, Appl. Phys. Lett., 102, 152111-3 (2013).
    100. B. Kearney, F. Alves, D. Grbovic, and G. Karunasiri, "Al∕SiOx∕Al single and multiband metamaterial absorbers for terahertz sensor applications", Optical Engineering, 52, 013801-8 (2013).
    101. F. Alves, D. Grbovic, B. Kearney, N. V. Lavrik, and G. Karunasiri, "Bi-material terahertz sensors using metamaterial structures", Optics Express, 21, 13256-13271 (2013).
    102. B. Kearney, F. Alves, D. Grbovic, and G. Karunasiri, "Terahertz metamaterial absorbers with an embedded resistive layer ", Optics Materials Express, 3, 1020-1025 (2013).
    103. R. Downey and G. Karunasiri, “Reduced residual stress curvature and branched comb fingers increase sensitivity of MEMS acoustic sensor”, IEEE Journal of MEMS, 23, 417-423 (2014).
    104. F. Alves, C. Smith, and G. Karunasiri, "A solid-state spark chamber for detection of ionizing radiation", Sensors & Actuators, A216, 102-105 (2014).
    105. F. Alves, D. Grbovic, and G. Karunasiri, "Investigation of microelectromechanical systems bimaterial sensors with metamaterial absorbers for terahertz imaging", Optical Engineering, 53, 097103 (2014).
    106. C. Bolakis, I. Karanasiou, D. Grbovic, G. Karunasiri, N. Uzunoglu, Optimizing detection methods for terahertz bioimaging applications, Optical Engineering, 54, 067107 (2015).
    107. C. Chang, F. Alves, and G. Karunasiri, "Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load ", AIP Advances, 6, 015209 (2016).
    108. D. Wilmott, F. Alves, and G. Karunasiri, "Bio-Inspired Miniature Directional Finding Acoustic Sensor ", submitted (2016).



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